GaN Transistor for Several Power Applications - Power Electronics News
Rad-tolerant GaN FET handles 15 A, 900 V - Power Electronic Tips
GaN FETs: The Technology of Choice for Audiophiles - Power Electronics News
Increasing gallium nitride MOSFET threshold voltage
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
LMG1210 200Vハーフブリッジ・MOSFETとGaN FETドライバ - TI | Mouser
業界最小の＋100V耐圧GaN FET、EPCがサーバー向け | 日経クロステック（xTECH）
GaN Power Devices: Potential, Benefits, and Keys to Successful Use | Mouser
GaN | Nexperia
Model for Gate Capacitance of trench GaN Mosfet
Cross-sectional schematic of normally-off GaN MOSFET with p-GaN... | Download Scientific Diagram
GaNの歩留まり90%や、耐圧1200Vの縦型構造など新GaNパワーFET - セミコンポータル
GaN Power HEMT > 650V VS SiC MOSFET- Power Electronics News
Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS
東芝，GaN-MOSFETの信頼性を向上するプロセスを開発 | OPTRONICS ONLINE オプトロニクスオンライン
GaN-HEMTの特徴 | 半導体製品 | 新電元工業株式会社- Shindengen
Digi-Key ElectronicsのGaN電源製品リソース | DigiKey
SiCおよびGaN半導体 | DigiKey
What is GaN? Gallium Nitride (GaN) Semiconductors Explained | EPC
Peregrine Semiconductor Unveils the World's Fastest GaN FET Driver - pSemi
EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN® FET Family | Business Wire
How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs - Power management - Technical articles - TI E2E support forums
GaN transistor characteristics at elevated temperatures: Journal of Applied Physics: Vol 106, No 7
GaN power devices, Part 1: Principles
新しい耐圧200 VのeGaNデバイスは、成熟したシリコン・パワーMOSFETに比べて性能が2倍です
GaN power devices: Perfecting the vertical architecture - News
Color online Cross section of the fabricated GaN MOSFET and MOS-HEMT. | Download Scientific Diagram
